In this invention, a film is evaporated onto textured templates. The film dewets during heating and at the graphene growth temperatures. Graphene formation is observed on the islands surrounded by the retreating film as it dewets. Graphene growth continues following the diminishing film until the entire surface is covered with graphene.
In prior methods of growing graphene using chemical vapor deposition (CVD), metal foils are necessary to begin the process of decomposition of hydrocarbons on the surface of the metal foils, which then create graphene. It is then transferred to another surfaces for application. The transfer process requires multiple steps of chemical treatment to dissolve metal foils, to rinse off residues, and to eliminate the supporting layer used to carry graphene during the transfer. Many additional defects form during this transfer process. Additionally, there are difficulties in scaling up the process for large size sheets of graphene. Direct growth of graphene, without a need to transfer to another surface, is therefore desired for practical applications. The KU method allows such direct growth, avoiding transfer defects and providing for a superior scalable approach.
The elimination of the need to transfer graphene reduces the possibility of defects. The process also allows for enhanced control of the graphene growth process.
- Graphene growth on dielectric substrates for various applications including:
This method can be applied to almost any substrate that can sustain a graphene growth temperature near 1000 degrees C. The resulting graphene layer has fewer defects than graphene produced with existing methods and subsequently transferred to the required substrate.